SVS7N60F(FJ)(D)D2_Datasheet
7A, 600V DP MOS POWER TRANSISTOR
DESCRIPTION
SVS7N60F(FJ)(D)D2 is an N-channel enhancement...
SVS7N60F(FJ)(D)D2_Datasheet
7A, 600V DP MOS POWER TRANSISTOR
DESCRIPTION
SVS7N60F(FJ)(D)D2 is an N-channel enhancement mode high
voltage power
MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example, it is suitable for hard and soft switching topologies.
FEATURES
7A,600V, RDS(on)(typ.)=0.48@VGS=10V New revolutionary high
voltage technology Ultra low gate charge Enhanced avalanche capability Extreme dv/dt rated High peak current capability
ORDERING INFORMATION
Part No.
SVS7N60FJD2 SVS7N60DD2TR SVS7N60FD2
Package
TO-220FJ-3L TO-252-2L TO-220F-3L
Marking
7N60FJD2 SVS7N60DD2 SVS7N60FD2
Hazardous substance control
Halogen free Halogen free Halogen free
Packing
Tube Tape&Reel
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.3 Page 1 of 9
SVS7N60F(FJ)(D)D2_Datasheet
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C)
Characteristics
Drain-Source
Voltage
Gate-Source
Voltage
Drain Current
TC=25°C TC=100°C
Drain Current Pulsed
Power Dissipation (TC=25C) - Derate above 25C
Single Pulsed Avalanche Energy (Note 1)
Reverse diode dv/dt (Note 2)
MOSFET dv/dt ruggedness (Note 3)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS VGS
ID
IDM
PD
EAS dv/dt dv/dt
TJ Tstg
Rat...