SVSP14N60FD2

SVSP14N60F(FJD)(T)D2_Datasheet 14A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVSP14N60F(FJD)(T)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DPMOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  14A,600V, RDS(on)(typ.)=0.25@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability ORDERING INFORMATION Part No. SVSP14N60TD2 SVSP14N60FJDD2 SVSP14N60FD2 Package TO-220-3L TO-220FJD-3L TO-220F-3L Marking P14N60TD2 P14N60FJD P14N60FD2 Hazardous Substance Control Halogen free Halogen free Halogen free Packing Tube Tube Tube ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipation (TC=25C) - Derate above 25C Single Pulsed Avalanche Energy (Note1) Reverse diode dv/dt (Note 2) MOSFET dv/dt ruggedness(Note 3) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS dv/dt dv/dt TJ Tstg Ratings SVSP14N60TD2 SVSP14N60F/FJDD2 600 ±30 14 8.8 56 120 38 0.96 0.3 580 15 50 -55～+150 -55～+150 Unit V V A A W W/C ...