SVSP7N60DE2TR

Silan Microelectronics SVSP7N60F(D)E2_Datasheet 7A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(D)E2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example, it is suitable for hard and soft switching topologies. FEATURES  7A,600V, RDS(on)(typ.)=0.48@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Enhanced avalanche capability  Extreme dv/dt rated  High peak current capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.Source 123 TO-220F-3L 1 3 TO-252-2L Silan DPMOS Code of DWell process SVSPXNEXXXXEX Process breakdown logo default: first generation process E2: second generation process; Process Version, P E3: third generation process denotes PASSIVATION Nominal current,using 1 or 2 digits: Packageinformation.Examp:F:TO-220F. Example:4 denotes 4A Specification mark, distinguish different gate oxygen N denotes N Channel thickness and different versions of products, can default Special Features indication, May be omitted. Example: E denotes embeded ESD structure Nominal Voltage,using 2 digits Example:60 denotes 600V,65 denotes 650V. ORDERING INFORMATION Part No. SVSP7N60FE2 SVSP7N60DE2TR Package TO-220F-3L TO-252-2L Marking P7N60FE2 P7N60DE2 Haza...