SVT13N06DTR

SVT13N06SA(D)_Datasheet 13A, 60V N-CHANNEL MOSFET DESCRIPTION The SVT13N06SA(D) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, DC-DC converters, synchronous rectifier and switch. FEATURES  13A，60V，RDS(on)(typ.)=9m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability ORDERING INFORMATION Part No. SVT13N06SA SVT13N06SATR SVT13N06DTR Package SOP-8-225-1.27 SOP-8-225-1.27 TO-252-2L Marking 13N06SA 13N06SA 13N06D Hazardous Substance Control Halogen free Halogen free Halogen free Packing Tube Tape & Reel Tape & Reel ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current TC=25°C TC=100°C Drain Current Pulsed(Note 1) Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy(Note 2) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg Ratings SVT13N06SA SVT13N06D 60 ±20 13 66 8.2 42 52 264 4.6 97 0.04 0.78 405 -55～+150 -55～+150 Unit V V A A W W/C mJ C C HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.5 Page 1 of 7 SVT13N06SA(D)_Datasheet THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Ca...