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SW10N60D Datasheet

Part Number SW10N60D
Manufacturers SEMIPOWER
Logo SEMIPOWER
Description MOSFET
Datasheet SW10N60D DatasheetSW10N60D Datasheet (PDF)

SAMWIN SW10N60D N-channel TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.1Ω)@VGS=10V ■ Gate Charge (Typical 35nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F 1 23 BVDSS : 600V ID : 10A RDS(ON) : 1.1Ω 2 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especiall.

  SW10N60D   SW10N60D






Part Number SW10N60K
Manufacturers SAMWIN
Logo SAMWIN
Description N-channel MOSFET
Datasheet SW10N60D DatasheetSW10N60K Datasheet (PDF)

SAMWIN SW10N60K N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.5Ω)@VGS=10V ■ Gate Charge (Typical 26nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F 1 2 3 BVDSS : 600V ID : 10.0A RDS(ON) : 0.5ohm 2 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced super-junction technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fasts witching time, excellent avalanche characteristics, low g.

  SW10N60D   SW10N60D







Part Number SW10N60
Manufacturers SAMWIN
Logo SAMWIN
Description N-channel MOSFET
Datasheet SW10N60D DatasheetSW10N60 Datasheet (PDF)

SAMWIN SW10N60 N-channel MOSFET BVDSS : 600V ID : 10.0A RDS(ON) : 0.75ohm 1 2 1 3 2 2 3 1 3 Features ■ High ruggedness ■ RDS(ON) (Max 0.75Ω)@VGS=10V ■ Gate Charge (Typ 37nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge an.

  SW10N60D   SW10N60D







MOSFET

SAMWIN SW10N60D N-channel TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.1Ω)@VGS=10V ■ Gate Charge (Typical 35nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F 1 23 BVDSS : 600V ID : 10A RDS(ON) : 1.1Ω 2 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. 1 3 Order Codes Item Sales Type 1 SW F 10N60 Marking SW10N60D Package TO-220F Packaging TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain curr.


2017-04-20 : CY8C3866    LN100    LND01    TC1550    ALD212908A    ALD212908    SW20N65K    SW4N60D    SW4N60K    SW9N90   


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