SW10N65

SW10N65 N-channel Enhanced mode TO-220F/TO-220 MOSFET Features TO- 220F TO-220  High ruggedness  Low RDS(ON) (Typ 1Ω)@VGS=10V  Low Gate Charge (Typ 40nC)  Improved dv/dt Capability  100% Avalanche Tested  Application: Charge,LED,PC Power 12 3 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 650V ID : 10A RDS(ON) : 1Ω 2 1 3 Order Codes Item 1 2 Sales Type SW P 10N65 SW F 10N65 Marking SW10N65 SW10N65 Package TO-220 TO-220F Packaging TUBE TUBE Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed Gate to source voltage Single pulsed avalanche energy (note 1) (note 2) Repetitive avalanche energy (note 1) Peak diode recovery dv/dt (note 3) Total power dissipation (@TC=25oC) Derating factor above 25oC Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. Value TO-220 TO-220F 650 10.0* 5.7* 36 ±30 212 15 5 156 38 1.25 0.3 -55 ~ + 150 300 Unit V A A A V mJ mJ V/ns W W/oC oC oC *. Drain current is limited by junction temperature. Thermal characterist...