SAMWIN
SW12N60
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 0.7 Ω)@VGS=10V ■ Gate Charge (Typ 58nC) ■ Im...
SAMWIN
SW12N60
N-channel
MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 0.7 Ω)@VGS=10V ■ Gate Charge (Typ 58nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-220F
TO-220
BVDSS : 600V ID
1 2 1 3 2
: 12.0A
RDS(ON) : 0.7ohm
3 2
1. Gate 2. Drain 3. Source
General Description
This power
MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power
MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
1 3
Absolute maximum ratings
Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source
Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed Gate to Source
Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recovery dv/dt Total power dissipation (@TC=25 C) Derating Factor above 25 C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
o o
Parameter
Value TO-220 600 12.0 7.0 (note 1) 48 ±30 (note 2) (note 1) (note 3) 165 1.32 -55 ~ + 150 300 960 22.5 5.0 52* 0.42 12.0* 7.0* TO-220F
Unit V A A A V mJ mJ V/ns W W/oC
o
C C
o
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol Rthjc Rthcs Rthja
Ma...