SW12N60

SAMWIN SW12N60 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.7 Ω)@VGS=10V ■ Gate Charge (Typ 58nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 BVDSS : 600V ID 1 2 1 3 2 : 12.0A RDS(ON) : 0.7ohm 3 2 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. 1 3 Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recovery dv/dt Total power dissipation (@TC=25 C) Derating Factor above 25 C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. o o Parameter Value TO-220 600 12.0 7.0 (note 1) 48 ±30 (note 2) (note 1) (note 3) 165 1.32 -55 ~ + 150 300 960 22.5 5.0 52* 0.42 12.0* 7.0* TO-220F Unit V A A A V mJ mJ V/ns W W/oC o C C o *. Drain current is limited by junction temperature. Thermal characteristics Symbol Rthjc Rthcs Rthja Ma...