SAMWIN
SW1N60L
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 23 Ω)@VGS=10V ■ Gate Charge (Max 4.5nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-92
1 2 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better charact...
