SW20N50

SAMWIN SW20N50 N-channel Power MOSFET Features ■ High ruggedness MOSFET ■ RDS(ON) (Max 0.27Ω)@VGS=10V ■ Gate Charge (Max 80nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-3P BVDSS : 500V ID : 20A* RDS(ON) : 0.27ohm 1 2 2 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block, high efficiency switch mode power supplies, power factor correction, electronic lamp ballast based on half bridge. 1 3 Order Codes Item 1 Sales Type SW W 20N50 Marking SW20N50 Package TO-3P Packaging TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recovery dv/dt Total power dissipation (@TC=25oC) Derating Factor above 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (note 2) (note 1) (note 3) (@TC=25oC) (note 1) Continuous Drain Current (@TC=100oC) Parameter SW20N50 500 20 14 80 ± 30 1200 30 4.5 300 2.38 -55 ~ + 175 300 Unit V A A A V mJ mJ V/ns W W/oC oC oC Thermal characteristics...