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SW20N50U Datasheet

Part Number SW20N50U
Manufacturers SEMIPOWER
Logo SEMIPOWER
Description MOSFET
Datasheet SW20N50U DatasheetSW20N50U Datasheet (PDF)

SAMWIN SW20N50U N-channel TO-3P MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.27Ω)@VGS=10V ■ Gate Charge (Typ 103 nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-3P 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is .

  SW20N50U   SW20N50U






Part Number SW20N50D
Manufacturers Seawon
Logo Seawon
Description N-channel MOSFET
Datasheet SW20N50U DatasheetSW20N50D Datasheet (PDF)

SW20N50D Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification N-channel MOSFET BVDSS 500V ID 20A RDS(on) < 0.3W Device SW20N50D Package TO-3PN Marking SW20N50D Remark RoHS Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipa.

  SW20N50U   SW20N50U







Part Number SW20N50
Manufacturers SAMWIN
Logo SAMWIN
Description N-channel Power MOSFET
Datasheet SW20N50U DatasheetSW20N50 Datasheet (PDF)

SAMWIN SW20N50 N-channel Power MOSFET Features ■ High ruggedness MOSFET ■ RDS(ON) (Max 0.27Ω)@VGS=10V ■ Gate Charge (Max 80nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-3P BVDSS : 500V ID : 20A* RDS(ON) : 0.27ohm 1 2 2 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and es.

  SW20N50U   SW20N50U







MOSFET

SAMWIN SW20N50U N-channel TO-3P MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.27Ω)@VGS=10V ■ Gate Charge (Typ 103 nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-3P 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. BVDSS : 500V ID : 20A RDS(ON) : 0.27Ω 2 1 3 Order Codes Item 1 Sales Type SWW 20N50 Marking SW20N50U Package TO-3P Packaging TUBE Absolute maximum ratings Symbol Parameter VDSS Drain to Source Voltage ID Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) IDM Drain current pulsed VGS Gate to Source Voltage .


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