SW226N

SAMWIN TO-251 TO-252 SW226N N-channel MOSFET BVDSS : 600V ID : 4.0A RDS(ON) : 2.3ohm 1 2 3 1 2 3 2 Features ■ High ruggedness ■ RDS(ON) (Max 2.3 Ω)@VGS=10V ■ Gate Charge (Typical 30nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. 3 Order Codes Item 1 2 Sales Type SW I 226N SW D 226N Marking SW226N SW226N Package TO-251 TO-252 Packaging TUBE REEL Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt Drain to Source Voltage Continuous Drain Current (@TC Continuous Drain Current (@TC Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recovery dv/dt (note 2) (note 1) (note 3) TO-251 PD TSTG, TJ TL Total power dissipation (@TC=25oC) Derating Factor above 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 60 0.47 -55 ~ + 150 300 =25oC) =100oC) (note 1) Parameter Value 600 4.0* 2.2* 16 ±30 310 20.4 4.5 TO-252 60 0.47 W W/oC oC oC Unit V A A A V mJ mJ V/ns *. Drain current is limited by junction temperature. Th...