SW22N60U

SAMWIN SW22N60U N-channel TO-3P MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.35Ω)@VGS=10V ■ Gate Charge (Typ 124 nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-3P 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. BVDSS : 600V ID : 22A RDS(ON) : 0.35Ω 2 1 3 Order Codes Item 1 Sales Type SWW 22N60 Marking SW22N60U Package TO-3P Packaging TUBE Absolute maximum ratings Symbol Parameter VDSS Drain to Source Voltage ID Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) IDM Drain current pulsed VGS Gate to Source Voltage ...