SAMWIN
SW2N10
N-channel SOT-23 MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max0.24Ω)@VGS=10V ■ Gate Charge (Typical ...
SAMWIN
SW2N10
N-channel SOT-23
MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max0.24Ω)@VGS=10V ■ Gate Charge (Typical 13nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
SOT-23 3
2 1
1. Gate 2. Source 3. Drain
General Description
This power
MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power
MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power
MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
BVDSS : 100V ID : 2A RDS(ON) :0.24Ω
2
1
3
Order Codes Item
Sales Type
1 SW E 2N10
Absolute maximum ratings
Marking SW2N10
Symbol
Parameter
VDSS
ID
IDM VGS EAS EAR dv/dt
Drain to Source
Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed Gate to Source
Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak ...
