SW2N65

SAMWIN SW2N65 N-channel MOSFET BVDSS : 650V ID : 2.0A RDS(ON) : 5.0ohm 2 1 2 1 3 2 3 1 Features ■ High ruggedness ■ RDS(ON) (Max 5.0 Ω)@VGS=10V ■ Gate Charge (Max 8nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical application is TV and monitor. 3 Order Codes Item 1 2 Sales Type SW P 2N65 SW F 2N65 Marking SW2N65 SW2N65 Package TO-220 TO-220F Packaging TUBE TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current Continuous Drain Current Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recovery dv/dt Total power dissipation (@TC=25oC) Derating Factor above 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (note 2) (note 1) (note 3) 64 0.5 -55 ~ + 150 300 (@TC=25oC) (@TC=100oC) (note 1) 2.1 1.0 8.4* ± 30 157 10 5.0 28* 0.21 Parameter Value TO-220 650 2.1* 1.0* TO-220F Unit V A A A V mJ mJ V/ns W W/oC oC oC *. Drain current is limite...