SAMWIN
SW2N70
Features
■ High ruggedness ■ RDS(ON) (Max 7 Ω)@VGS=10V ■ Gate Charge (Max 5nC) ■ Improved dv/dt Capabili...
SAMWIN
SW2N70
Features
■ High ruggedness ■ RDS(ON) (Max 7 Ω)@VGS=10V ■ Gate Charge (Max 5nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-251
TO-252
12 3
2 1
3
1. Gate 2. Drain 3. Source
General Description
This power
MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power
MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power
MOSFET is usually used at AC adaptors and SMPS.
N-channel
MOSFET
BVDSS : 700V ID : 2A RDS(ON) : 7ohm
2
1 3
Order Codes
Item Sales Type 1 SW I 2N70 2 SW D 2N70
Absolute maximum ratings
Marking SW2N70 SW2N70
Symbol VDSS
ID
IDM VGS EAS EAR dv/dt
PD
TSTG, TJ TL
Parameter
Drain to Source
Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed Gate to Source
Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recovery dv...
