SW30N06

www.DataSheet.co.kr SAMWIN SW30N06 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.036 Ω)@VGS=10V ■ Gate Charge (Typ 20nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220 TO-251 TO-252 BVDSS : 60V ID : 30A RDS(ON) : 0.036 ohm 2 1 1 2 3 1 2 3 2 3 1. Gate 2. Drain 3. Source 1 General Description These N-channel enhancement mode power field effect transistors are produced using SAMWIN’s proprietary, planar stripe, DMOS technology. This advanced technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers 3 Order Codes Item 1 2 3 Sales Type SW P 30N06 SW I 30N06 SW D 30N06 Marking SW30N06 SW30N06 SW30N06 Package TO-220 TO-251 TO-252 Packaging TUBE TUBE REEL Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recovery dv/dt Total power dissipation (@TC Derating Factor above 25oC =25oC) (note 2) (note 1) (note 3) (@TC=100oC) (note 1) Parameter Value 60 30 14 120 ± 20 178 4.0 7.0 44 0.57 -55 ~ + 150 300 Unit V A A A V mJ mJ V/ns W W/oC oC oC Operating Junction Temperature & Storage Temperature Maximum Lead...