SW3N80

www.DataSheet.co.kr SAMWIN SW3N80 N-channel MOSFET BVDSS : 800V ID : 3.0A RDS(ON) : 4.5ohm 1 2 1 3 2 2 Features ■ High ruggedness ■ RDS(ON) (Max 4.5 Ω)@VGS=10V ■ Gate Charge (Typ 26nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 3 1 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. 3 Order Codes Item 1 2 Sales Type SW P 3N80 SW F 3N80 Marking SW3N80 SW3N80 Package TO-220 TO-220F Packaging TUBE TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recovery dv/dt Total power dissipation (@TC Derating Factor above 25oC =25oC) (note 2) (note 1) (note 3) 106 0.8 -55 ~ + 150 300 (note 1) 3.0 1.9 12 ± 30 310 10 4.5 39* 0.31 Parameter Value TO-220 800 3.0* 1.9* TO-220F Unit V A A A V mJ mJ V/ns W W/oC oC oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. *. Drain current is limited...