SW4N60B

SAMWIN TO-251 TO-252 TO-220F SW4N60B N-channel I-PAK/D-PAK/TO-220F MOSFET BVDSS : 600V ID 1 Features ■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@VGS=10V ■ Gate Charge (Typ 11nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested : 4A RDS(ON) : 2.5Ω 2 1 3 2 3 1 2 2 3 1 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. Order Codes Item 1 2 3 Sales Type SW I 4N60 SW D 4N60 SW F 4N60 Marking SW4N60B SW4N60B SW4N60B Package TO-251 TO-252 TO-220F Packaging TUBE REEL TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current Continuous Drain Current Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recovery dv/dt Total power dissipation (@TC=25oC) Derating Factor above 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (note 2) (note 1) (note 3) 140 1.1 (@TC=25oC) (@TC=100oC) (note 1) Parameter Value TO-251 TO-252 600 4* 2.5* 16 ± 30 271 50 5 144.5 1.2 -55 ~ + 150 300 19.1 0.152 TO-220F Unit V A A A V mJ mJ...