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SW4N60K Datasheet

Part Number SW4N60K
Manufacturers SEMIPOWER
Logo SEMIPOWER
Description N-Channel MOSFET
Datasheet SW4N60K DatasheetSW4N60K Datasheet (PDF)

SW4N60K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features  High ruggedness  Low RDS(ON) (Typ 1Ω)@VGS=10V  Low Gate Charge (Typ 13nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:Adapter,LED, Charger TO-220F TO-251 TO-252 1 2 3 12 3 1 2 3 1. Gate 2. Drain 3. Source BVDSS : 600V ID : 4A RDS(ON) : 1Ω 2 1 General Description 3 This power MOSFET is produced with advanced super junction technology of SAMWIN. This technology enable the power MOSFET .

  SW4N60K   SW4N60K






Part Number SW4N60V
Manufacturers Samwin
Logo Samwin
Description N-Channel MOSFET
Datasheet SW4N60K DatasheetSW4N60V Datasheet (PDF)

www.DataSheet.co.kr SAMWIN SW4N60V N-channel MOSFET BVDSS : 600V ID : 4.0A RDS(ON) : 2.5ohm 1 2 2 Features ■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@VGS=10V ■ Gate Charge (Typ 25nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-251 3 1 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge.

  SW4N60K   SW4N60K







Part Number SW4N60D
Manufacturers SEMIPOWER
Logo SEMIPOWER
Description MOSFET
Datasheet SW4N60K DatasheetSW4N60D Datasheet (PDF)

SAMWIN SW4N60D N-channel TO-220F/I-PAKN/D-PAK MOSFET Features TO-220F TO-251N TO-252 ■ High ruggedness ■ RDS(ON) (Max 2.2Ω)@VGS=10V ■ Gate Charge (Typ 18nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 123 12 3 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially e.

  SW4N60K   SW4N60K







Part Number SW4N60B
Manufacturers SEMIPOWER
Logo SEMIPOWER
Description N-channel I-PAK/D-PAK/TO-220F MOSFET
Datasheet SW4N60K DatasheetSW4N60B Datasheet (PDF)

SAMWIN TO-251 TO-252 TO-220F SW4N60B N-channel I-PAK/D-PAK/TO-220F MOSFET BVDSS : 600V ID 1 Features ■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@VGS=10V ■ Gate Charge (Typ 11nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested : 4A RDS(ON) : 2.5Ω 2 1 3 2 3 1 2 2 3 1 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on res.

  SW4N60K   SW4N60K







Part Number SW4N60A
Manufacturers Samwin
Logo Samwin
Description N-Channel MOSFET
Datasheet SW4N60K DatasheetSW4N60A Datasheet (PDF)

www.DataSheet.co.kr SAMWIN SW4N60A N-channel MOSFET BVDSS : 600V ID : 4.0A RDS(ON) : 2.2ohm 1 2 1 3 2 2 Features ■ High ruggedness ■ RDS(ON) (Max 2.2 Ω)@VGS=10V ■ Gate Charge (Typ 25nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 3 1 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, .

  SW4N60K   SW4N60K







N-Channel MOSFET

SW4N60K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features  High ruggedness  Low RDS(ON) (Typ 1Ω)@VGS=10V  Low Gate Charge (Typ 13nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:Adapter,LED, Charger TO-220F TO-251 TO-252 1 2 3 12 3 1 2 3 1. Gate 2. Drain 3. Source BVDSS : 600V ID : 4A RDS(ON) : 1Ω 2 1 General Description 3 This power MOSFET is produced with advanced super junction technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type 1 SW F 4N60K 2 SW I 4N60K 3 SW D 4N60K Absolute maximum ratings Marking SW4N60K SW4N60K SW4N60K Package TO-220F TO-251 TO-252 Packaging TUBE TUBE REEL Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed Gate to source voltage Single pulsed avalanche energy Repetitive avalanche energy MOSFET dv/dt ruggedness (@VDS=0~400V) (note 1) (note 2) (note 1) Value TO-220F TO-251 TO-252 600 4* 2.5* 12 ±30 50 5 30 Unit V A A A V mJ mJ V/ns dv/dt PD TSTG, TJ TL Peak diode recovery dv/dt (note 3) Total power dissipation (@TC=25oC) Derating factor above 25oC Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 2.


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