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SW4N65 MOSFET Datasheet PDFN-Channel MOSFET N-Channel MOSFET |
　
　
　
| Part Number | SW4N65 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | www. DataSheet. co. kr SAMWIN TO-220F TO-2 20 SW4N65 N-channel MOSFET Features ⠖ High ruggedness ■RDS(ON) (Max 2. 6 Ω)@VGS=10V ■Gate Charge (Typ 18nC ) ■Improved dv/dt Capability ■100 % Avalanche Tested BVDSS : 650V ID : 4 . 0A RDS(ON) : 2. 6ohm 1 2 1 3 2 3 2 1. Gate 2. Drain 3. Source 1 3 General Description This power MOSFET is produc ed with advanced VDMOS technology of SA MWIN. This technology enable power MOSF ET to have better characteristics, such as fast switching time, low on resista nce, low gate charge and especially exc ellent avalanche characteristics. This power MOSFET is usually us . |
| Manufacture | Samwin |
| Datasheet |
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| Part Number | SW4N65 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | www. DataSheet. co. kr SAMWIN TO-220F TO-2 20 SW4N65 N-channel MOSFET Features ⠖ High ruggedness ■RDS(ON) (Max 2. 6 Ω)@VGS=10V ■Gate Charge (Typ 18nC ) ■Improved dv/dt Capability ■100 % Avalanche Tested BVDSS : 650V ID : 4 . 0A RDS(ON) : 2. 6ohm 1 2 1 3 2 3 2 1. Gate 2. Drain 3. Source 1 3 General Description This power MOSFET is produc ed with advanced VDMOS technology of SA MWIN. This technology enable power MOSF ET to have better characteristics, such as fast switching time, low on resista nce, low gate charge and especially exc ellent avalanche characteristics. This power MOSFET is usually us . |
| Manufacture | Samwin |
| Datasheet |
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