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SAMWIN
Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25...
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SAMWIN
Features
N-Channel
MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ℃) : 600 V : 1 ohm : 7.0 A : 30 nc : 142 W
SW7N60
General Description
This power
MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power
MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power
MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. D
G S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG,TJ TL Drain to Source
Voltage Continuous Drain Current (@Tc=25℃) Continuous Drain Current (@Tc=100℃) Drain Current Pulsed Gate to Source
Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (@Tc=25℃) Derating Factor above 25℃ Operating junction temperature &Storage temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1)
Parameter
Value
600 7 4.7 28 ±30 530 14.2 4.5 142 1.14 -55~+150 300
Units
V A A A V mJ mJ V/ns W W/℃ ℃ ℃
Thermal Characteristics
Value Symbol
RèJC RèCS RèJA
Units Max
0.88 ℃/ W ℃/ W 62.5 ℃/ W
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
Min
-
Typ
0.5 -
1/6
REV0.2
04.11.1
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