SAMWIN
SW7N90
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 1.8 Ω)@VGS=10V ■ Gate Charge (Typical 50nC) ■...
SAMWIN
SW7N90
N-channel
MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 1.8 Ω)@VGS=10V ■ Gate Charge (Typical 50nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
BVDSS : 900V ID : 7.0A RDS(ON) : 1.8ohm
2
1. Gate 2. Drain 3. Source
General Description
This power
MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power
MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power
MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
1 3
Order Codes
Item 1 Sales Type SW W 7N90 Marking SW7N90 Package TO-3P Packaging TUBE
Absolute maximum ratings
Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source
Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed Gate to Source
Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recovery dv/dt Total power dissipation (@TC Derating Factor above 25oC =25oC) (note 2) (note 1) (note 3) (note 1) Parameter Value 900 7.0* 4.4* 28 ±30 580 72 2 390 3.1 -55 ~ + 150 300 Unit V A A A V mJ mJ V/ns W W/oC
oC oC
Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol Rthjc Rthcs Rthja Parameter Thermal resistance, Junctio...