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SW80N08B Datasheet

Part Number SW80N08B
Manufacturers SEMIPOWER
Logo SEMIPOWER
Description MOSFET
Datasheet SW80N08B DatasheetSW80N08B Datasheet (PDF)

SAMWIN SW80N08B N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max8.5mΩ)@VGS=10V ■ Gate Charge (Typical 72nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. T.

  SW80N08B   SW80N08B






Part Number SW80N08A
Manufacturers SEMIPOWER
Logo SEMIPOWER
Description MOSFET
Datasheet SW80N08B DatasheetSW80N08A Datasheet (PDF)

SAMWIN SW80N08A N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max9.2mΩ)@VGS=10V ■ Gate Charge (Typical 82nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. T.

  SW80N08B   SW80N08B







MOSFET

SAMWIN SW80N08B N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max8.5mΩ)@VGS=10V ■ Gate Charge (Typical 72nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 80V ID : 80A RDS(ON) :8.5mΩ 2 1 3 Order Codes Item Sales Type 1 SW P 80N08 Marking SW80N08B Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed (note 1) Gate to Source Voltage Single pulsed Avalanche Energy (.


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