SW9N90

SAMWIN SW9N90 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.45 Ω)@VGS=10V ■ Gate Charge (Typ 60nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-3P 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. BVDSS : 900V ID : 9.0A RDS(ON) : 1.45ohm 2 1 3 Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed (note 1) Gate to Source Voltage Single pulsed Avalanche Energy (note 2) Repetitive Avalan...