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Si2306BDS
Vishay Siliconix
N-Channel 30-V (D-S)
MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.047 at VGS = 10 V 0.065 at VGS = 4.5 V ID (A) 4.0 3.5 Qg (Typ.) 3.0
FEATURES
Halogen-free Option Available TrenchFET® Power
MOSFET 100 % Rg Tested
RoHS
COMPLIANT
TO-236 (SOT-23)
G
1 3 D
S
2
Top View Si2306BDS (L6 )* * Marking Code Ordering Information: Si2306BDS-T1-E3 (Lead (Pb)-free) Si2306BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ = 150 °C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 1.04 1.25 0.8 - 55 to 150 4.0 3.5 20 0.62 0.75 0.48 W °C 5s 30 ± 20 3.16 2.7 A Steady State Unit V
THERMAL RESISTANCE RATINGS
Parameter Symb Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on FR4 board, t ≤ 5 s. b. Pulse width limited by maximum junction temperature. c. Surface Mounted on FR4 board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 73234 S-80642-Rev. B, 24-Mar-08 www.vishay.com 1 t≤5s Steady State Steady State ol RthJA RthJF Typical 80 130 60 Maximum 100 166 75 °C/W Unit
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