N-Channel 20 V (D-S) MOSFET
Si2312BDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 20
RDS(on) (Ω) 0.031 at VGS = 4.5 V 0...
N-Channel 20 V (D-S)
MOSFET
Si2312BDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 20
RDS(on) (Ω) 0.031 at VGS = 4.5 V 0.037 at VGS = 2.5 V 0.047 at VGS = 1.8 V
ID (A) 5.0 4.6 4.1
Qg (Typ.) 7.5
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power
MOSFET
100 % Rg Tested Compliant to RoHS Directive 2002/95/EC
TO-236 (SOT-23)
G1 S2
3D
Top View Si2312BDS (M2)* * Marking Code
Ordering Information: Si2312BDS-T1-E3 (Lead (Pb)-free) Si2312BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentb Avalanche Currentb Single Avalanche Energy Continuous Source Current (Diode Conduction)a
Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25 °C TA = 70 °C
L = 0.1 mH
TA = 25 °C TA = 70 °C
VDS VGS
ID
IDM IAS EAS IS
PD
TJ, Tstg
20 ±8 5....