Si2312CDS

New Product Si2312CDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0318 at VGS = 4.5 V 20 0.0356 at VGS = 2.5 V 0.0414 at VGS = 1.8 V ID (A)e 6a 6a 5.6 8.8 nC Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converters Load Switch for Portable Applications SOT-23 D G 1 3 D Marking Code P5 XXX Lot Traceability and Date Code Part # Code G S 2 Top View Ordering Information: Si2312CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C IDM IS Symbol VDS VGS Limit 20 ±8 6a 5.1 5b, c 4b, c 20 1.75 1.04b, c 2.1 1.3 1.25b, c 0.8b, c - 55 to 150 260 A Unit V Continuous Drain Current (TJ = 150 °C) ID Maximum Power Dissipation PD W TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t≤5s Steady State Symbol RthJA RthJF Typical 80 40 Maximum 100 60 Unit °C/W Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady stat...