Si2318DS

N-Channel 40-V (D-S) MOSFET Si2318DS Vishay Siliconix PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) 0.045 at VGS = 10 V 0.058 at VGS = 4.5 V ID (A) 3.9 3.5 FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET APPLICATIONS Stepper Motors Load Switch TO-236 (SOT-23) G1 S2 3D Top View Si2318DS( C8)* *Marking Code Ordering Information: Si2318DS-T1-E3 (Lead (Pb)-free) Si2318DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID 3.9 3.0 3.1 2.4 Pulsed Drain Currentb IDM 16 Continuous Source Current (Diode Conduction)a, b IS 0.8 Power Dissipationa, b TA = 25 °C TA = 70 °C PD 1.25 0.75 0.8 0.48 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t≤5s Steady State Maximum Junction-to-Foot (Drain) Steady State Notes: a. Surface mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature Document Number: 72322 S09-0130-Rev. B, 02-Feb-09 Symbol RthJA RthJF Typical 75 120 40 Maximum 100 166 50 Unit °C/W www.vishay.com 1 Si2318DS Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source ...