Si2319CDS

Si2319CDS Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES ID (A)a - 4.4 7 nC - 3.7 Qg (Typ.) PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) 0.077 at VGS = - 10 V 0.108 at VGS = - 4.5 V Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-236 (SOT-23) Load Switch DC/DC Converter S G 1 3 D G S 2 Top View Si2319CDS (P7)* * Marking Code Ordering Information: Si2319CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit - 40 ± 20 - 4.4 - 3.5 - 3.1b, c - 2.5b, c - 20 - 2.1 - 1b, c 2.5 1.6 1.25b, c 0.8b, c - 55 to 150 °C W A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t≤5s Steady State Symbol RthJA RthJF Typical 75 40 Maximum 100 50 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W. Document Number: 66709 S10-1286-Rev. A, 31-May-10 www.vishay.com 1 Si2319CDS Vishay Sil...