Si2374DS
www.vishay.com
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) (Ω) MAX. 0.030...
Si2374DS
www.vishay.com
Vishay Siliconix
N-Channel 20 V (D-S)
MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) (Ω) MAX. 0.030 at VGS = 4.5 V 0.034 at VGS = 2.5 V 0.041 at VGS = 1.8 V ID (A) d 5.9 5.5 5 7.7 nC Qg (TYP.)
FEATURES
TrenchFET® power
MOSFET 100 % Rg tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
SOT-23 (TO-236)
D 3
APPLICATIONS
Load switch Power management
D
G 2 S 1 G Top View S N-Channel
MOSFET
Marking Code: F5 Ordering Information: Si2374DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER Drain-Source
Voltage Gate-Source
Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS ID SYMBOL VDS VGS LIMIT 20 ±8 5.9 4.7 4.5 a, b 3.6 a, b 25 1.4 0.8 a, b 1.7 1.1 0.96 a, b 0.62 a, b -55 to 150 °C W A UNIT V
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient
a, c
SYMBOL t≤5s Steady State RthJA RthJF
TYPICAL 100 60
MAXIMUM 130 75
UNIT °C/W
Maximum Junction-to-Foot (Drain)
Notes a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 175 °C/W. d. TC = 25 °C. S14-0768-Rev. A, 14-Apr-14 Document Number: 62947 1 For technical quest...