N-Channel 100 V (D-S) MOSFET
Si2392DS
Vishay Siliconix
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
ID (A)a
0.126 at VGS = 10 V
3.1
100
0.144 at VGS = 6 V
2.9
0.189 at VGS = 4.5 V
2.6
Qg (Typ.) 2.9 nC
TO-236 (SOT-23)
G1 S2
3D
Top View Si2392DS (E2)* * Marking Code
Ordering Information: Si2392DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization:
For definitions of compliance please see www.vishay.co.
N-Channel MOSFET
N-Channel 100 V (D-S) MOSFET
Si2392DS
Vishay Siliconix
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
ID (A)a
0.126 at VGS = 10 V
3.1
100
0.144 at VGS = 6 V
2.9
0.189 at VGS = 4.5 V
2.6
Qg (Typ.) 2.9 nC
TO-236 (SOT-23)
G1 S2
3D
Top View Si2392DS (E2)* * Marking Code
Ordering Information: Si2392DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
• DC/DC Converters / Boost Converters • Load Switch • LED Backlighting in LCD TVs • Power Management for Mobile Computing
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain)
5 s Steady State
Notes:
a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
Symbol
RthJA RthJF
Typical 75 40
L.