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SI4420DY Datasheet

Part Number SI4420DY
Manufacturers NXP
Logo NXP
Description N-channel FET
Datasheet SI4420DY DatasheetSI4420DY Datasheet (PDF)

Si4420DY N-channel enhancement mode field-effect transistor M3D315 Rev. 01 — 28 May 2001 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si4420DY in SOT96-1 (SO8). 2. Features s Low on-state resistance s Fast switching s TrenchMOS™ technology. 3. Applications s s s s s DC to DC convertors DC motor control Lithium-ion battery applications Notebook PC Portable equipment applications. c c 4..

  SI4420DY   SI4420DY






Part Number Si4420DY
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet SI4420DY DatasheetSi4420DY Datasheet (PDF)

PD - 93835 Si4420DY l N-Channel MOSFET l Low On-Resistance l Low Gate Charge l Surface Mount l Logic Level Drive S S S G Description This N-channel HEXFET® power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that al.

  SI4420DY   SI4420DY







Part Number Si4420DY
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Single N-Channel MOSFET
Datasheet SI4420DY DatasheetSi4420DY Datasheet (PDF)

Si4420DY January 2000 Si4420DY* Single N-Channel Logic Level PowerTrench® MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications • Battery switch • Load.

  SI4420DY   SI4420DY







N-channel FET

Si4420DY N-channel enhancement mode field-effect transistor M3D315 Rev. 01 — 28 May 2001 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si4420DY in SOT96-1 (SO8). 2. Features s Low on-state resistance s Fast switching s TrenchMOS™ technology. 3. Applications s s s s s DC to DC convertors DC motor control Lithium-ion battery applications Notebook PC Portable equipment applications. c c 4. Pinning information Table 1: Pin 1,2,3 4 5,6,7,8 Pinning - SOT96-1, simplified outline and symbol Description source (s) 8 5 d Simplified outline Symbol gate (g) drain (d) 1 Top view 4 MBK187 g s MBB076 SOT96-1 (SO8) 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors Si4420DY N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 °C Tamb = 25 °C; pulsed; tp ≤ 10 s Tamb = 25 °C; pulsed; tp ≤ 10 s VGS = 10 V; ID = 12.5 A VGS = 4.5 V; ID = 10.5 A Typ − − − − 7.3 10.9 Max 30 12.5 2.5 150 9 13 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VGS ID IDM Ptot Tstg Tj IS drain-source voltage (DC) gate-source voltage (DC).


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