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SI4420DY FET Datasheet PDF

N-channel FET

N-channel FET

 

 

 

Part Number SI4420DY
Description N-channel FET
Feature Si4420DY N-channel enhancement mode fie ld-effect transistor M3D315 Rev.
01 28 May 2001 Product data 1.
Descrip tion N-channel enhancement mode field- effect transistor in a plastic package using TrenchMOS™1 technology.
Product availability: Si4420DY in SOT96-1 (SO8 ).
2.
Features s Low on-state resistan ce s Fast switching s TrenchMOS™ tech nology.
3.
Applications s s s s s DC t o DC convertors DC motor control Lithiu m-ion battery applications Notebook PC Portable equipment applications.
c c 4.
Pinning information Table 1: Pin 1,2 ,3 4 5,6,7,8 Pinning - SOT96-1, simpli ed outline and symbol De .
Manufacture NXP
Datasheet
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Part Number Si4420DY
Description Power MOSFET
Feature PD - 93835 Si4420DY l N-Channel MOSFET l Low On-Resistance l Low Gate Charge l Surface Mount l Logic Level Drive S S S G Description This N-channel HEXFET ® power MOSFET is produced using Inter national Rectifier's advanced HEXFET po wer MOSFET technology.
The low on-resis tance and low gate charge inherent to t his technology make this device ideal f or low voltage or battery driven power conversion applications The SO-8 packag e with copper leadframe offers enhanced thermal characteristics that allow pow er dissipation of greater that 800mW in typical board mount applications.
HEX FET® Power MOSF .
Manufacture International Rectifier
Datasheet
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Part Number Si4420DY
Description Single N-Channel MOSFET
Feature Si4420DY January 2000 Si4420DY* Single N-Channel Logic Level PowerTrench® MO SFET General Description This N-Channe l Logic Level MOSFET is produced using Fairchild Semiconductor's advanced Powe rTrench process that has been especiall y tailored to minimize on-state resista nce and yet maintain superior switching performance.
This device is well suite d for low voltage and battery powered a pplications where low in-line power los s and fast switching are required.
Appl ications • Battery switch • Load swit ch • Motor controls Features • 12.
5 A, 30 V.
RDS(ON) = 0.
009 W @ VGS = 10 V RDS(ON) = 0.
013 W .
Manufacture Fairchild Semiconductor
Datasheet
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