Si4542DY

Si4542DY Si4542DY 30V Complementary PowerTrench MOSFET General Description Features This complementary MOSFET device is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications DC/DC converter Q1: N-Channel 6 A, 30 V RDS(on) = 28 mΩ @ VGS = 10V RDS(on) = 35 mΩ @ VGS = 4.5V Q2: P-Channel –6 A, –30 V RDS(on) = 32 mΩ @ VGS = –10V RDS(on) = 45 mΩ @ VGS = –4.5V Power management DD2 DD2 DD1 DD1 SO-8 Pin 1 SO-8 G2 S2 G G1 S1 S S S Q2 5 6 Q1 7 8 4 3 2 1 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size 4542 Si4542DY 13” Q1 Q2 30 –30 ±20 ±20 6 –6 20 –20 2 1.6 1.2 1 –55 to +175 78 40 Units V V A W °C °C/W °C/W Tape width 12mm Quantity 2500 units 2001 Semiconductor Components Industries, LLC. October-2017, Rev 1 Publication Order Number: Si4542DY/D Si4542DY Electrical Characteristics Sym...