Si7317DN

P-Channel 150 V (D-S) MOSFET Si7317DN Vishay Siliconix PRODUCT SUMMARY VDS (V) - 150 RDS(on) () Max. 1.2 at VGS = - 10 V 1.3 at VGS = - 6 V ID (A)f - 2.8 - 2.7 Qg (Typ.) 6.5 nC PowerPAK 1212-8 FEATURES TrenchFET® Power MOSFETs PowerPAK® Package - Low Thermal Resistance 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Available 3.3 mm S 1S 3.3 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: Si7317DN-T1-GE3 (Lead (Pb)-free and Halogen-free) APPLICATIONS Active Clamp circiuts in DC/DC Power Supplies Load Switch G S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS - 150 VGS ± 30 V TC = 25 °C - 2.8 Continuous Drain Current (TJ = 150 °C)a,b TC = 70 °C TA = 25 °C ID - 2.2 - 1.1a,b Pulsed Drain Current (t = 100 µs) TA = 70 °C IDM - 0.9a,b -2 A Continuous Source-Drain Diode Currenta,b TC = 25 °C TA = 25 °C IS - 8e - 2.7a,b Single Pulse Avalanche Current Single Pulse Avalanche Energy L 0.1 mH IAS EAS 4 0.8 mJ TC = 25 °C 19.8 Maximum Power Dissipationa,b TC = 70 °C TA = 25 °C PD 12.7 3.2a,b W TA = 70 °C 2.1a,b Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c,d TJ, Tstg - 55 to 150 260 °C Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. c. See solder profile (www.vishay.co...