Si7342DP

Si7342DP Vishay Siliconix N-Channel 30 V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.00825 at VGS = 10 V 0.00975 at VGS = 4.5 V ID (A) 15 13 FEATURES Halogen-free According to IEC 61249-2-21 Definition Extremely Low Qgd for Low Switching Losses TrenchFET® Power MOSFET New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm High-Side DC/DC Conversion - Notebook - Server D G Bottom View Ordering Information: Si7342DP-T1-E3 (Lead (Pb)-free) Si7342DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation a Symbol VDS VGS TA = 25 °C TA = 70 °C ID IDM IS TA = 25 °C TA = 70 °C PD TJ, Tstg 10 s 15 12 4.1 5 3.2 Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c Steady State 30 ± 12 9 7 ± 60 1.5 1.8 1.1 - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Case (Drain) t  10 s Steady State Steady State Symbol RthJA RthJC Typical 20 53 2.1 Maximum 25 70 3.2 Unit °C/W Notes: a. Surface mounted on 1” x 1” FR4 board. b. See sol...