Si7344DP

N-Channel 20-V (D-S) MOSFET Si7344DP Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.008 @ VGS = 10 V 20 0.012 @ VGS = 4.5 V ID (A) 17 14 PowerPAK SO-8 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3 G 4 Bottom View Ordering Information: Si7344DP-T1 Si7344DP-T1—E3 (Lead (Pb)-Free) FEATURES TrenchFET® Power MOSFET New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile PWM Optimized Available RoHS* COMPLIANT APPLICATIONS DC/DC conversion High-Side - Desktop - Server Synchronous Rectification D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 secs Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150°C)a Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c TA = 25°C TA = 70°C TA = 25°C TA = 70°C VDS VGS ID IDM IS PD TJ, Tstg 20 ±20 17 11 14 9 50 3.7 1.6 4.1 1.8 2.6 1.1 –55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 sec Steady State RthJA 22 55 30 70 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 4.5 5.5 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is...