Si7366DP

Si7366DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.0055 at VGS = 10 V 0.009 at VGS = 4.5 V ID (A) 20 16 FEATURES Halogen-free available TrenchFET® Power MOSFET Qg Optimized RoHS COMPLIANT APPLICATIONS Synchronous Rectifier for DC/DC PowerPAK® SO-8 6.15 mm S 1 2 3 S S 5.15 mm G 4 D D 8 7 6 5 D D D G Bottom View Ordering Information: Si7366DP-T1-E3 (Lead (Pb)-free) Si7366DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 s Steady State 20 ± 20 13 10 50 1.4 1.7 1.1 - 55 to 150 260 Unit V 20 17 4.1 5 3.2 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol t ≤ 10 s Steady State Steady State RthJA °C/W RthJC Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1” x 1” FR4 board. b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed co...