Si7444DP
Vishay Siliconix
www.DataSheet4U.com
N-Channel 40-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
40
FE...
Si7444DP
Vishay Siliconix
www.DataSheet4U.com
N-Channel 40-V (D-S) Fast Switching
MOSFET
PRODUCT SUMMARY
VDS (V)
40
FEATURES
ID (A)
23.6
rDS(on) (W)
0.0061 @ VGS = 10 V
Qg (Typ)
105
D TrenchFETr Power
MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested D High Threshold
Voltage At High Temperature
PowerPAK SO-8
6.15 mm
S 1 2 S 3 S
5.15 mm
D
4 D 8 7 D 6 D 5 D
G
G
Bottom View Ordering Information: Si7444DP-T1—E3
S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C Conduction)a TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS IAS EAS PD TJ, Tstg
10 secs
40 "20 23.6 18.9 60 4.5 45 100 5.4 3.4
Steady State
Unit
V
14 11.2 A 1.6
mJ 1.9 1.2 W _C
−55 to 150
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72920 S-42058—Rev. B, 15-Nov-04 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
18 52 1.0
Maximum
23 65 1.3
Unit
_C/W
1
Si7444DP
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold
Voltage Gate-Body Leakage...