P-Channel 30-V (D-S) MOSFET
Si7447ADP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 30
RDS(on) (Ω) 0.0065 at VGS = - 10 V
PowerPAK SO-8
ID (A)a - 35
Qg (Typ.) 100 nC
6.15 mm
D
8
D
7 D
6 D
5
S
1
S
5.15 mm
2 S
3
G
4
Bottom View
Ordering Information: Si7447ADP-T1-E3 (Lead (Pb)-free) Si7447ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK®
Package with Low 1.07 .
P-Channel MOSFET
P-Channel 30-V (D-S) MOSFET
Si7447ADP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 30
RDS(on) (Ω) 0.0065 at VGS = - 10 V
PowerPAK SO-8
ID (A)a - 35
Qg (Typ.) 100 nC
6.15 mm
D
8
D
7 D
6 D
5
S
1
S
5.15 mm
2 S
3
G
4
Bottom View
Ordering Information: Si7447ADP-T1-E3 (Lead (Pb)-free) Si7447ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
• 100 % Rg Tested
APPLICATIONS
S
• Battery and Load Switching - Notebook Computers - Notebook Battery Packs G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
- 30
V
VGS
± 25
TC = 25 °C
- 35
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
- 28 - 21.5b, c
Pulsed Drain Current
TA = 70 °C IDM
- 17b, c - 60
A
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
- 28 - 4.3b, c
Single Pulse Avalanche Current Avalanche Energy
L = 0.1 mH
IAS EAS
40 80
mJ
TC = 25 °C
83.3
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
53.3 5.4b, c
W
TA = 70 °C
3.4b, c
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drai.