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Si7447ADP Datasheet

Part Number Si7447ADP
Manufacturers Vishay
Logo Vishay
Description P-Channel MOSFET
Datasheet Si7447ADP DatasheetSi7447ADP Datasheet (PDF)

P-Channel 30-V (D-S) MOSFET Si7447ADP Vishay Siliconix PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) 0.0065 at VGS = - 10 V PowerPAK SO-8 ID (A)a - 35 Qg (Typ.) 100 nC 6.15 mm D 8 D 7 D 6 D 5 S 1 S 5.15 mm 2 S 3 G 4 Bottom View Ordering Information: Si7447ADP-T1-E3 (Lead (Pb)-free) Si7447ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 .

  Si7447ADP   Si7447ADP






P-Channel MOSFET

P-Channel 30-V (D-S) MOSFET Si7447ADP Vishay Siliconix PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) 0.0065 at VGS = - 10 V PowerPAK SO-8 ID (A)a - 35 Qg (Typ.) 100 nC 6.15 mm D 8 D 7 D 6 D 5 S 1 S 5.15 mm 2 S 3 G 4 Bottom View Ordering Information: Si7447ADP-T1-E3 (Lead (Pb)-free) Si7447ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg Tested APPLICATIONS S • Battery and Load Switching - Notebook Computers - Notebook Battery Packs G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS - 30 V VGS ± 25 TC = 25 °C - 35 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID - 28 - 21.5b, c Pulsed Drain Current TA = 70 °C IDM - 17b, c - 60 A Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS - 28 - 4.3b, c Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS 40 80 mJ TC = 25 °C 83.3 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 53.3 5.4b, c W TA = 70 °C 3.4b, c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg - 55 to 150 °C 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drai.


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