Si7476DP

Si7476DP Vishay Siliconix N-Channel 40-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0053 at VGS = 10 V 40 0.0066 at VGS = 4.5 V ID (A) 25 23 FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile PowerPAK SO-8 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3 G 4 Bottom View Ordering Information: Si7476DP-T1-E3 (Lead (Pb)-free) Si7476DP-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 40 ± 20 25 15 20 12 80 4.5 1.6 60 180 5.4 1.9 3.4 1.2 - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 s Steady State RthJA 18 52 23 65 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 1.0 1.3 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead termi...