New Product
N-Channel 30-V (D-S) MOSFET
Si7634BDP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0054 at VGS = 10 V 30
0.007 at VGS = 4.5 V
ID (A)a 40g 40g
Qg (Typ.) 21.5 nC
FEATURES
• Halogen-free available • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested
RoHS
COMPLIANT
PowerPAK SO-8
6.15 mm
S 1S
5.15 mm
2 S
3G
4
D
8D 7 D 6 D 5
Bottom View
Ordering Information: Si7634BDP-T1-E3 (Lead (Pb)-free) Si7634BDP-T1-GE3 (Lead (Pb)-free and Halogen-free)
APP.
N-channel MOSFET
New Product
N-Channel 30-V (D-S) MOSFET
Si7634BDP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0054 at VGS = 10 V 30
0.007 at VGS = 4.5 V
ID (A)a 40g 40g
Qg (Typ.) 21.5 nC
FEATURES
• Halogen-free available • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested
RoHS
COMPLIANT
PowerPAK SO-8
6.15 mm
S 1S
5.15 mm
2 S
3G
4
D
8D 7 D 6 D 5
Bottom View
Ordering Information: Si7634BDP-T1-E3 (Lead (Pb)-free) Si7634BDP-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• Notebook PC Core - Low Side - High Side
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit
30
± 20
40g 40g 22.5b, c 18.0b, c 70
40g 4.5b, c
30
45
48
31 5.0b, c 3.2b, c - 55 to 150
260
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain)
t ≤ 10 s Steady State
RthJA RthJC
20 2.1
25 °C/W 2.6
Notes: a. Based on TC .