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Si7634BDP Datasheet

Part Number Si7634BDP
Manufacturers Vishay
Logo Vishay
Description N-channel MOSFET
Datasheet Si7634BDP DatasheetSi7634BDP Datasheet (PDF)

New Product N-Channel 30-V (D-S) MOSFET Si7634BDP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0054 at VGS = 10 V 30 0.007 at VGS = 4.5 V ID (A)a 40g 40g Qg (Typ.) 21.5 nC FEATURES • Halogen-free available • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested RoHS COMPLIANT PowerPAK SO-8 6.15 mm S 1S 5.15 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: Si7634BDP-T1-E3 (Lead (Pb)-free) Si7634BDP-T1-GE3 (Lead (Pb)-free and Halogen-free) APP.

  Si7634BDP   Si7634BDP






N-channel MOSFET

New Product N-Channel 30-V (D-S) MOSFET Si7634BDP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0054 at VGS = 10 V 30 0.007 at VGS = 4.5 V ID (A)a 40g 40g Qg (Typ.) 21.5 nC FEATURES • Halogen-free available • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested RoHS COMPLIANT PowerPAK SO-8 6.15 mm S 1S 5.15 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: Si7634BDP-T1-E3 (Lead (Pb)-free) Si7634BDP-T1-GE3 (Lead (Pb)-free and Halogen-free) APPLICATIONS • Notebook PC Core - Low Side - High Side D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature)d, e Limit 30 ± 20 40g 40g 22.5b, c 18.0b, c 70 40g 4.5b, c 30 45 48 31 5.0b, c 3.2b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State RthJA RthJC 20 2.1 25 °C/W 2.6 Notes: a. Based on TC .


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