N-Channel 30-V (D-S) MOSFET
Si7682DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.0090 at VGS = 10 V 0...
N-Channel 30-V (D-S)
MOSFET
Si7682DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.0090 at VGS = 10 V 0.0130 at VGS = 4.5 V
ID (A)a 20 20
Qg (Typ.) 11 nC
FEATURES
Halogen-free According to IEC 61249-2-21 Available
TrenchFET® Power
MOSFET 100 % Rg Tested
PowerPAK SO-8
6.15 mm
D 8D
7 D
6 D
5
S 1S
5.15 mm
2 S
3G
4
Bottom View
Ordering Information: Si7682DP-T1-E3 (Lead (Pb)-free) Si7682DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS High-Side DC/DC Conversion
- Notebook - Server
D
G
S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 ...
