SiHB21N60EF

www.vishay.com SiHB21N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 84 14 24 Single D2PAK (TO-263) 0.176 D GD S G S N-Channel MOSFET FEATURES Fast body diode MOSFET using E series technology Reduced trr, Qrr, and IRRM Low figure-of-merit (FOM): Ron x Qg Low input capacitance (Ciss) Increased robustness due to low Qrr Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Telecommunications - Server and telecom power supplies Lighting - High intensity discharge (HID) - Light emitting diodes (LEDs) Consumer and computing - ATX power supplies Industrial - Welding - Battery chargers Renewable energy - Solar (PV inverters) Switch mode power suppliers (SMPS) Applications using...