www.vishay.com
SiHB21N65EF
Vishay Siliconix
E Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ...
www.vishay.com
SiHB21N65EF
Vishay Siliconix
E Series Power
MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
700 VGS = 10 V
106 14 33 Single
0.18
D
D2PAK (TO-263)
GD S
G
S N-Channel
MOSFET
FEATURES
Fast body diode
MOSFET using E series technology
Reduced trr, Qrr, and IRRM Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Low switching losses due to reduced Qrr Ultra low gate charge (Qg) Avalanche energy rated (UIS)
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
Telecommunications - Server and telecom power supplies
Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
Consumer and computing - ATX power supplies
Industrial - Welding - Battery chargers
Renewable energy - Solar (PV inverters)
Switch mode power supplies (SMPS) Applications using...