SiHB21N65EF

www.vishay.com SiHB21N65EF Vishay Siliconix E Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 106 14 33 Single 0.18 D D2PAK (TO-263) GD S G S N-Channel MOSFET FEATURES Fast body diode MOSFET using E series technology Reduced trr, Qrr, and IRRM Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Low switching losses due to reduced Qrr Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Telecommunications - Server and telecom power supplies Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting Consumer and computing - ATX power supplies Industrial - Welding - Battery chargers Renewable energy - Solar (PV inverters) Switch mode power supplies (SMPS) Applications using...