SiHB22N65E

www.vishay.com SiHB22N65E Vishay Siliconix E Series Power MOSFET D D2PAK (TO-263) GD S PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V Qg typ. (nC) ID (A) Configuration G S N-Channel MOSFET 700 0.18 32 22 Single FEATURES Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free D2PAK (TO-263) SIHB22N65E-GE3 SIHB22N65E-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current a Linear derating factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single pulse avalanche energy b Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope Reverse diode dV/dt d TJ = 125 °C EAS PD TJ, Tstg dV/dt Soldering recommendations (peak temperature) c for 10 s Notes a. Repetitive rating; pulse width limited b...