www.vishay.com
SiHB30N60E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
130 15 39 Single
0.125
D2PAK (TO-263)
D
GD S
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
FEATURES • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses
• Ultra Low Gate Charge (Qg) • Avalanche Energy Rated (U.
Power MOSFET
www.vishay.com
SiHB30N60E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
130 15 39 Single
0.125
D2PAK (TO-263)
D
GD S
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
FEATURES • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses
• Ultra Low Gate Charge (Qg) • Avalanche Energy Rated (UIS)
• Material categorization: For definitions please www.vishay.com/doc?99912
see
APPLICATIONS • Server and Telecom Power Supplies • Switch Mode Power Supplies (SMPS) • Power Factor Correction Power Supplies (PFC) • Lighting
- High-Intensity Discharge (HID) - Fluorescent Ballast Lighting - LED Lighting • Industrial - Welding - Induction Heating - Motor Drives • Battery Chargers • Renewable Energy - Solar (PV Inverters)
D2PAK (TO-263) SiHB30N60E-GE3
ABSOLUTE MAXI.