Power MOSFET
IRF9510S, SiHF9510S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC...
Power
MOSFET
IRF9510S, SiHF9510S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
- 100 VGS = - 10 V
8.7 2.2 4.1 Single
1.2
D2PAK (TO-263)
S
G
GD S
D P-Channel
MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note a. See device orientation.
D2PAK (TO-263) SiHF9510S-GE3 IRF9510SPbF SiHF9510S-E3
FEATURES Halogen-free According to IEC 61249-2-21
Definition Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated P-Channel 175 °C Operating Temperature Fast Switching Compliant to RoHS Directive 2002/95/EC
DESCRIPTION Third generation Power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
D2PAK (TO-263) SiHF9510STRL-GE3a IRF9510STRLPbFa SiHF9510STL-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
...