SiHFI624G

Power MOSFET IRFI624G, SiHFI624G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 14 2.7 7.8 Single 1.1 TO-220 FULLPAK D G GDS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Isolated Package High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Dynamic dV/dt Rating Low Thermal Resistance Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK IRFI624GPbF SiHFI624G-E3 IRFI624G SiHFI624G ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Rep...