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SiHFI9610G
Power MOSFET
Description
IRFI9610G, SiHFI9610G Vishay Siliconix Power
MOSFET
PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com - 200 VGS = - 10 V 13 3.2 7.3 Single S FEATURES Isolated Package High
Voltage
Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Sink to Lead Creepage Distance = 4.8 mm P-Channel Dynamic dV/dt Rating ...
Vishay Siliconix
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