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SiHFIB7N50A Datasheet

Part Number SiHFIB7N50A
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SiHFIB7N50A DatasheetSiHFIB7N50A Datasheet (PDF)

IRFIB7N50A, SiHFIB7N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 52 13 18 Single 0.52 TO-220 FULLPAK D G GDS S N-Channel MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Ruggedness COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS direc.

  SiHFIB7N50A   SiHFIB7N50A






Part Number SiHFIB7N50L
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SiHFIB7N50A DatasheetSiHFIB7N50L Datasheet (PDF)

IRFIB7N50L, SiHFIB7N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 92 24 44 Single 0.320 TO-220 FULLPAK D G GDS ORDERING INFORMATION Package Lead (Pb)-free S N-Channel MOSFET FEATURES • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Reqirements RoHS COMPLIANT • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Hig.

  SiHFIB7N50A   SiHFIB7N50A







Power MOSFET

IRFIB7N50A, SiHFIB7N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 52 13 18 Single 0.52 TO-220 FULLPAK D G GDS S N-Channel MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Ruggedness COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) TYPICAL SMPS TOPOLOGIES • Two Transistor Forward • Half and Full Bridge Convertors • Power Factor Correction Boost ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 FULLPAK IRFIB7N50APbF SiHFIB7N50A-E3 IRFIB7N50A SiHFIB7N50A ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentf Continuous Drain Current Pulsed Drain Currenta, e Linear Derating Factor Single Pulse Avalanche Energyb, e Repetitive Avalanche Currenta, e Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc, e VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting .


2015-05-11 : TP5000    3DD4121DM    SiHFIB7N50A    TPSMB6.8    TPSMB6.8A    TPSMB7.5    TPSMB7.5A    TPSMB8.2    TPSMB8.2A    TPSMB9.1   


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